Jove
Visualize
Contact Us

Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

526
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
526
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

351
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
351
P-N junction01:11

P-N junction

719
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
719
Faraday Disk Dynamo01:23

Faraday Disk Dynamo

2.6K
A Faraday disk dynamo is a DC generator, producing an emf that is constant in time. It consists of a conducting disk that rotates with a constant angular velocity in the magnetic field, perpendicular to the disk's plane. The rotation of the disk causes a change in magnetic flux, which induces an emf, causing opposite charges to develop on the rim and in the center of the disk. The polarity of the induced emf can be determined by the direction of the magnetic field and the direction of the...
2.6K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

541
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
541
DC Generator01:19

DC Generator

1.2K
An alternator converts mechanical energy into electrical energy that varies sinusoidally, resulting in AC current. Meanwhile, a DC generator converts mechanical energy into electrical energy, which are DC pulses with the same polarity. The construction of a DC generator is similar to that of an alternator, except that the pair of slip rings is replaced by a single split ring, also called a commutator. The commutator functions like a periodic rotary switch; it changes the contacts with the...
1.2K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Federated deep learning for distributed intrusion detection and privacy preservation in power networks.

Scientific reports·2026
Same author

THGEM-Based Air Ionization Chamber for Online Dose Monitoring in Conventional and FLASH Radiotherapy.

International journal of radiation oncology, biology, physics·2026
Same author

Lysine pyruvylation couples glycolytic flux to epigenetic regulation.

Nature metabolism·2026
Same author

Food-Derived Antidiabetic Peptides as Multi-Target Systemic Regulators: A Comprehensive Review of Sources, Preparation, Mechanisms and Future Perspectives.

Foods (Basel, Switzerland)·2026
Same author

Seasonal Dynamics of the Volatile Metabolome and Aroma Contribution in Xinyang Maojian Green Tea.

Biology·2026
Same author

Unpacking Multi-Layered Challenges in Palliative Care Transitions: A Descriptive Qualitative Study of Multidisciplinary Teams in China.

Journal of multidisciplinary healthcare·2026
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: Sep 25, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.8K

Wind driven semiconductor electricity generator with high direct current output based on a dynamic Schottky junction.

Xutao Yu1, Haonan Zheng1, Yanghua Lu1

  • 1College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University Hangzhou 310027 China shishenglin@zju.edu.cn.

RSC Advances
|April 28, 2022
PubMed
Summary

This study introduces a novel wind-driven semiconductor generator for the Internet of Things (IoTs). This device offers a continuous power source for distributed sensors, overcoming limitations of traditional batteries.

More Related Videos

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.9K
Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids
13:29

Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids

Published on: August 23, 2012

14.3K

Related Experiment Videos

Last Updated: Sep 25, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.8K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.9K
Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids
13:29

Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids

Published on: August 23, 2012

14.3K

Area of Science:

  • Materials Science
  • Energy Harvesting
  • Semiconductor Devices

Background:

  • The proliferation of Internet of Things (IoTs) necessitates advanced portable power solutions.
  • Current portable power sources like lithium batteries suffer from low capacity and frequent recharging requirements.
  • A continuous, in-situ electrical power generation method is highly desirable for distributed sensors.

Purpose of the Study:

  • To develop a novel wind-driven semiconductor electricity generator.
  • To demonstrate a portable power source capable of continuous energy generation.
  • To explore applications in powering distributed sensors and electronic devices.

Main Methods:

  • Fabrication of a wind-driven semiconductor electricity generator utilizing a dynamic Schottky junction.
  • Characterization of the generator's direct current output under wind stimulation.
  • Integration and testing of the generator as a turn counter and to power a graphene ultraviolet photodetector.

Main Results:

  • The generator achieved a continuous direct current output with an average of 4.4 mA and a maximum of 8.4 mA over 740 seconds.
  • The output current was observed to be approximately one thousand times higher than previous metal/semiconductor generators.
  • The device successfully functioned as a turn counter and powered a graphene ultraviolet photodetector with a responsivity of 35.8 A W⁻¹.

Conclusions:

  • A feasible method for wind power generation using a dynamic Schottky junction semiconductor device has been demonstrated.
  • The developed generator offers a promising solution for continuous power supply to distributed sensors in IoT applications.
  • This technology paves the way for self-powered, long-lasting sensor networks and portable electronics.