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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Flexible electric-double-layer thin film transistors based on a vertical InGaZnO4 channel

Liuhui Lei1, Yuanyuan Tan2, Xing Yuan1

  • 1School of Physics and Electronics, Key Laboratory of Low Dimensional Quantum Structures and Quantum Control, Key Laboratory for Matter Microstructure and Function of Hunan Province, Synergetic Innovation Centre for Quantum Effects and Application, Hunan Normal University Changsha 410081 People's Republic of China douwei139@163.com wchangzhou@hunnu.edu.cn dstang@hunnu.edu.cn.

RSC Advances
|April 28, 2022
PubMed

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