New fabrication method for di-indium tri-sulfuric (In₂S₃) thin films

Area of Science:

• Materials Science
• Solid State Physics
• Inorganic Chemistry

Background:

• Di-indium tri-sulfide (In2S3) is a semiconductor material with potential applications in optoelectronics.
• Fabrication methods for In2S3 thin films are crucial for optimizing its properties.
• Understanding the influence of processing parameters on film characteristics is essential.

Purpose of the Study:

• To investigate the effect of annealing temperature and pressure on the structural, morphological, and optical properties of In2S3 thin films.
• To determine the optimal annealing conditions for In2S3 thin film growth.
• To establish a new fabrication method for In2S3 thin films.

Main Methods:

• Indium thin films were annealed in a sulfur environment.
• X-ray diffraction (XRD) was used to analyze structural phases.
• Field emission scanning electron microscopy (FE-SEM) was employed to study morphology.
• Energy dispersive X-ray (EDX) spectroscopy confirmed chemical composition.
• Raman and photoluminescence (PL) spectroscopy were utilized for optical characterization.

Main Results:

• Annealing temperature and pressure significantly influenced the structural phases and morphology of In2S3 films.
• EDX analysis confirmed the desired In/S atomic ratio for In2S3.
• Optimal annealing conditions were identified as 550°C and 100 Torr.
• The study revealed distinct structural and morphological changes with varying process parameters.

Conclusions:

• A novel and effective method for growing In2S3 thin films has been developed.
• The identified optimal annealing conditions (550°C, 100 Torr) are suitable for producing high-quality In2S3 thin films.
• These findings contribute to the advancement of In2S3 thin film fabrication for diverse technological applications.