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Preparing an Isotopically Pure 229Th Ion Beam for Studies of 229mTh
Published on: May 3, 2019
Ion beam composition in ion source based on magnetron sputtering discharge at extremely low working pressure
A V Vizir1, A S Bugaev1, V P Frolova2
1Institute of High Current Electronics, Siberian Branch of the Russian Academy of Sciences, 2/3 Akademichesky Ave., Tomsk 634055, Russia.
This study shows that using a vacuum arc plasma injector allows pulsed magnetron sputtering to work at very low pressures. This results in a non-monotonic pressure dependence for gaseous ion fractions in the ion beam.
Area of Science:
- Plasma physics
- Ion source technology
- Surface science
Background:
- Pulsed planar magnetron sputtering discharges typically require a minimum gas pressure for stable operation.
- The fraction of metal ions in the ion beam decreases as gas pressure is reduced in conventional magnetron sputtering.
Purpose of the Study:
- To investigate stable operation of pulsed magnetron sputtering at extremely low pressures.
- To analyze the effect of a supplementary vacuum arc plasma injector on ion beam composition.
- To determine the pressure dependence of gaseous ion fraction under novel operating conditions.
Main Methods:
- Utilized a pulsed planar magnetron sputtering discharge.
- Employed a supplementary vacuum arc plasma injector.
- Operated the system at extremely low pressures without gas feed.
- Analyzed ion beam composition and pressure dependence of ion fractions.
Main Results:
- Achieved stable operation of the magnetron sputtering discharge at extremely low pressures using the plasma injector.
- Observed that the gaseous ion fraction exhibits a non-monotonic dependence on pressure under these conditions.
- Demonstrated stable magnetron sputtering operation without gas feed.
Conclusions:
- Supplementary vacuum arc plasma injection enables stable, gas-feed-free magnetron sputtering at ultra-low pressures.
- The non-monotonic pressure dependence of gaseous ion fraction indicates a complex plasma interaction mechanism.
- This technique offers new possibilities for controlling ion beam composition in sputtering sources.
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