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Updated: Sep 25, 2025
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for
Lucas Güniat1, Nicolas Tappy1, Akshay Balgarkashi1
1Laboratory of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale de Lausanne, Route Cantonale, 1015 Lausanne, Switzerland.
Abstract:
III-V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si technology with III-V semiconductors by integration on Si(100) remains a challenge still today. Vertical nanospades (NSPDs) are quasi-bi-crystal III-V nanostructures that grow on Si(100). Here, we showcase the potential of these structures in optoelectronics application by demonstrating InGaAs heterostructures on GaAs NSPDs that exhibit bright emission in the near-infrared region. Using cathodoluminescence hyperspectral imaging, we are able to study light emission properties at a few nanometers of spatial resolution, well below the optical diffraction limit. We observe a symmetric spatial luminescence splitting throughout the NSPD. We correlate this characteristic to the structure's crystal nature, thus opening new perspectives for dual wavelength light-emitting diode structures. This work paves the path for integrating optically active III-V structures on the Si(100) platform.
