UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes
Shanshan Chen1,2,3, Tengrun Zhan1, Xinhua Pan3,4,5
1School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 People's Republic of China.
RSC Advances
|May 2, 2022
Abstract:
5-period ZnO/Zn0.9Mg0.1O multiple quantum wells (MQWs) were employed as active layers to fabricate the p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It exhibited an efficient UV emission around 370 nm at room temperature. Calculated band structures and carrier distributions showed that electrons were restricted to overflow to the p-type layer, and carriers were confined in the high-quality MQWs well layer.
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