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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

349
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
349

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Universal machine learning framework for defect predictions in zinc blende semiconductors.

Arun Mannodi-Kanakkithodi1,2, Xiaofeng Xiang3, Laura Jacoby4

  • 1Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL 60439, USA.

Patterns (New York, N.Y.)
|May 5, 2022
PubMed
Summary

We developed a machine learning framework to predict and screen functional impurities in semiconductors, identifying promising candidates for improved material properties.

Keywords:
combinatorial screeningcomputational materials sciencedensity functional theoryhigh-throughput datamachine learningmaterials informaticsmid-gap statespoint defectssemiconductors

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Area of Science:

  • Materials Science
  • Computational Chemistry
  • Solid State Physics

Background:

  • Semiconductor functional impurities significantly impact material properties.
  • Predicting impurity behavior requires extensive computational resources.

Purpose of the Study:

  • To develop a machine learning (ML) framework for predicting and screening functional impurities in semiconductors.
  • To accelerate the discovery of novel semiconductor materials with tailored properties.

Main Methods:

  • Utilized high-throughput density functional theory (DFT) computations to generate a dataset of defect formation energies.
  • Employed machine learning regression models trained on elemental and defect properties.
  • Screened a wide range of elements as impurities across various semiconductor types.

Main Results:

  • Developed ML models capable of predicting impurity formation energies and charge transition levels.
  • Successfully screened approximately 12,000 impurity-semiconductor combinations.
  • Identified impurities with lower formation energies than native defects in candidate semiconductors.

Conclusions:

  • The ML-DFT framework enables efficient prediction and screening of functional impurities.
  • This approach accelerates the discovery of advanced semiconductor materials.
  • The developed framework can guide experimental efforts in materials design.