Versatile vapor phase deposition approach to cesium tin bromide materials CsSnBr3, CsSn2Br5 and Cs2SnBr6
Sara Bonomi1, Maddalena Patrini2, Giovanni Bongiovanni3
1Department of Chemistry, University of Pavia, INSTM Viale Taramelli 16 Pavia 27100 Italy lorenzo.malavasi@unipv.it +39 382 987921.
RSC Advances
|May 6, 2022
Summary
Researchers successfully used RF-magnetron sputtering to create three distinct cesium tin bromide (Cs-Sn-Br) thin films. This vapor phase deposition method is promising for photovoltaic and optoelectronic applications.
Area of Science:
- Materials Science
- Solid State Chemistry
- Thin Film Deposition
Background:
- Cesium tin bromide (Cs-Sn-Br) compounds are of interest for photovoltaic and optoelectronic applications.
- Vapor phase deposition methods offer versatility in material synthesis.
Purpose of the Study:
- To demonstrate the successful application of RF-magnetron sputtering for depositing multiple Cs-Sn-Br compounds.
- To characterize the crystal structure, optical properties, and morphology of the deposited films.
- To highlight the potential of sputtering for complex inorganic materials.
Main Methods:
- RF-magnetron sputtering using a single target material.
- Controlled variation of deposition parameters.
- Post-deposition treatments.
- Comprehensive material characterization (crystal structure, optical, morphology).
Main Results:
- Successful deposition of three distinct Cs-Sn-Br thin films: CsSnBr3, CsSn2Br5, and Cs2SnBr6.
- Demonstrated ability to stabilize these perovskite and perovskite-related compounds.
- Detailed characterization data for crystal structure, optical properties, and morphology.
Conclusions:
- RF-magnetron sputtering is a versatile and effective method for depositing various Cs-Sn-Br compounds.
- Vapor phase deposition shows significant potential for creating all-inorganic materials for advanced applications.
- Sputtering is advantageous for synthesizing complex materials like cesium tin bromides.
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