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Related Experiment Video

Updated: Sep 24, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Published on: May 13, 2020

Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory.

Sweety Deswal^1,2, Rupali R Malode³, Ashok Kumar^1,2

¹Academy of Scientific and Innovative Research, CSIR-National Physical Laboratory Campus Dr. K. S. Krishnan Marg New Delhi 110012 India kumarajeet@nplindia.org.

|May 6, 2022

Summary

Researchers achieved stable quantized conductance states in niobium oxide devices, enabling multilevel memory. This breakthrough allows controlled switching between different memory states for advanced atomic-scale data storage.

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Last Updated: Sep 24, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Published on: May 13, 2020

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Area of Science:

Materials Science
Nanotechnology
Solid-State Physics

Background:

Quantized conductance (QC) and its link to resistive switching are vital for atomic-scale memory.
Developing multilevel memory elements requires precise control over quantized states.

Purpose of the Study:

To demonstrate stable and reproducible quantized conductance states (QC-states) in Al/niobium oxide/Pt resistive switching devices.
To achieve three levels of control over QC-states for multilevel memory applications.

Main Methods:

Fabrication of Al/niobium oxide/Pt resistive switching devices.
Utilizing stop-voltage and current compliance limits to control switching behavior.
Characterization of quantized conductance states and switching dynamics.

Main Results:

Highly stable and reproducible QC-states were demonstrated in the devices.
Three distinct levels of control were achieved: switching ON to different states, switching OFF from states, and inter-state switching.
The control was achieved by imposing specific stop-voltage and current compliance conditions.

Conclusions:

The demonstrated well-defined multiple QC states offer a promising pathway for implementing multilevel memory devices.
The developed switching principle facilitates controlled manipulation of quantized states for memory applications.
This work advances the realization of atomic-scale multilevel memory elements.