Efficient charge separation and visible-light response in bilayer HfS2-based van der Waals heterostructures
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Updated: Sep 23, 2025

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Biao Wang1, Xukai Luo1, Junli Chang1
1School of Physical Science and Technology, Southwest University Chongqing 400715 People's Republic of China chenh@swu.edu.cn.
Abstract:
Two-dimensional (2D) hafnium disulfide (HfS2) has been synthesized and is expected to be a promising candidate for photovoltaic applications, and at the same time the hexagonal BN sheet (h-BN) and graphene-like C3N4 sheet (g-C3N4) have also been fabricated and are expected to be applied in photocatalysis. In this work, we employ hybrid density functional theory to investigate HfS2-based van der Waals (vdW) heterojunctions for highly efficient photovoltaic and photocatalytic applications. HfS2/h-BN and HfS2/g-C3N4 heterostructures with direct bandgaps and efficient charge separation are both typical type-II semiconductors and have potential as photovoltaic structures for solar power. Moreover, compared with h-BN and g-C3N4 single-layers, HfS2/h-BN heterostructures with 6% tensile strain and HfS2/g-C3N4 heterostructures with 9% tensile strain have moderate bandgaps, whose optical absorption is obviously enhanced in the ultraviolet-visible (UV-VIS) light range and whose bandedges are suitable for photocatalytic water splitting. HfS2/h-BN heterostructures with 6% applied strain, being different from HfS2/g-C3N4 heterostructures with 9% strain, possess a direct bandgap and show complete separation of the photoinduced electron-hole pairs. Thus the HfS2/h-BN heterojunction with 6% strain has bright prospects for use in visible light photocatalytic water splitting to produce hydrogen.
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