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A vertical WSe2-MoSe2 p-n heterostructure with tunable gate rectification.

Hailing Liu1,2, Sajjad Hussain1,2, Asif Ali1,2

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Researchers synthesized a continuous vertical molybdenum diselenide/tungsten diselenide (MoSe2/WSe2) p-n heterostructure. This novel structure exhibits tunable rectifying behavior, achieving a high rectification ratio of 1600.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Transition Metal Dichalcogenides (TMDs) are promising for electronic and optoelectronic applications.
  • Vertical heterostructures offer unique electronic properties compared to lateral ones.
  • Controlling the interface and properties of TMD heterostructures is crucial for device performance.

Purpose of the Study:

  • To synthesize a continuous vertical molybdenum diselenide/tungsten diselenide (MoSe2/WSe2) p-n heterostructure.
  • To investigate the electronic properties and device performance of the fabricated heterostructure.
  • To demonstrate the tunability of the p-n diode characteristics using back-gate bias.

Main Methods:

  • Utilized a sputtering-Chemical Vapor Deposition (CVD) method for synthesizing the vertical MoSe2/WSe2 p-n heterostructure.
  • Fabricated back-gated field-effect transistors (FETs) using WSe2 and MoSe2.
  • Characterized the current-voltage (I-V) behavior of the vertical p-n diode under varying back-gate voltages.

Main Results:

  • Achieved a continuous MoSe2/WSe2 p-n heterostructure, unlike conventional CVD methods.
  • Demonstrated good gate modulation in WSe2 and MoSe2 FETs with high hole and electron mobilities (∼2.2 and ∼15.1 cm2 V-1 s-1, respectively).
  • Observed tunable rectifying behavior in the vertical p-n diode, with the rectification ratio increasing from ∼18 to ∼1600 as gate bias increased from -40 V to +40 V.

Conclusions:

  • The sputtering-CVD method enables the synthesis of high-quality vertical TMD heterostructures.
  • The back-gate tunability of the barrier height significantly enhances the diode's rectification ratio.
  • The achieved rectification ratio surpasses previously reported values for CVD-grown TMD p-n heterostructures, highlighting potential for advanced electronic devices.