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Updated: Jul 26, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Structural and spectral characterisation of Er3+ and Nd3+ doped Ga-La-S-Se glasses
A Ravagli1, N G Boetti2, F A Guzman Cruz1
1Optoelctronics Research Centre, University of Southampton University Road SO171BJ Southampton UK ar1e15@soton.ac.uk.
Abstract:
In this work, the spectroscopy of Er3+ and Nd3+ doped Se-GLS glasses was studied. A structural comparison between doped and non-doped samples was done to assess the differences between the glasses. For this comparison, Raman spectroscopy and thermal analysis were employed. The spectral properties of the samples were studied in order to identify the mechanisms responsible for quenching the fluorescence lifetime of the dopants. In particular, cross-relaxation and concentration quenching were observed in Nd3+ doped samples, whilst co-operative upconversion, radiation trapping and concentration quenching were observed in Er3+ doped samples. The results obtained demonstrated the fundamental role of the phonon energy in the mechanism of fluorescence. The low phonon energy of chalcogenides decreased the rate of non-radiative processes promoting co-operative upconversion. This effect could be exploited to design new lasers and sensitizers for solar energy harvesters.

