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Updated: Sep 23, 2025
11:42
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
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Halogenation of graphene triggered by heteroatom doping
Samson O Olanrele1,2,3, Zan Lian1,2, Chaowei Si1,2
1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China boli@imr.ac.cn.
RSC Advances
|May 11, 2022
Summary
Doping graphene with boron and nitrogen significantly enhances halogen interactions, enabling facile halogenation. This tuning of graphene properties opens new avenues for material science applications.
Area of Science:
- Materials Science
- Chemical Physics
- Surface Science
Background:
- Halogenation is crucial for tailoring graphene properties.
- Understanding halogen-graphene interactions is key for material design.
Purpose of the Study:
- To investigate the effects of boron and nitrogen doping on halogen interactions with graphene.
- To explore tunable interactions for facile graphene halogenation.
Main Methods:
- First-principles calculations were employed.
- The study focused on interactions between halogen diatomic molecules (Cl2, Br2, I2, F2) and doped graphene.
Main Results:
- Boron and nitrogen doping alter graphene's electronic structure, creating spin density and orbital polarization.
- Doping significantly increases binding energies for Cl2, Br2, and I2.
- Spontaneous dissociation of F2 was observed on doped graphene.
Conclusions:
- Boron and nitrogen doping offer effective control over halogen-graphene interactions.
- Doping presents a promising strategy for facile and tunable graphene halogenation.
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