Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

Spherical and Cylindrical Capacitor

Spherical and Cylindrical Capacitor

A spherical capacitor consists of two concentric conducting spherical shells of radii R1 (inner shell) and R2 (outer shell). The shells have equal and opposite charges of +Q and −Q, respectively. For an isolated conducting spherical capacitor, the radius of the outer shell can be considered to be infinite.
Conventionally, considering the symmetry, the electric field between the concentric shells of a spherical capacitor is directed radially outward. The magnitude of the field,...

Capacitor With A Dielectric

Capacitor With A Dielectric

Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...

Equivalent Capacitance

Equivalent Capacitance

Multiple capacitors can be connected in a circuit in series or parallel configuration. When the capacitor combination is connected to a battery, the potential drop across each capacitor and the magnitude of charge stored in the individual capacitor depends on the type of the connection. The capacitor combination is replaced by a single equivalent capacitor that stores the same amount of charge as the combination for a given potential difference.
The following strategies are adopted to calculate...

Equivalent Capacitance

Equivalent Capacitance

From the study of resistive circuits, it is understood that employing a series-parallel combination serves as an effective strategy for simplifying circuits. Capacitors can be arranged within a circuit in one of two ways: a series configuration or a parallel configuration. The way these capacitors are connected to a battery will influence both the potential drop across each individual capacitor and the size of the charge that each capacitor can store. This is determined by the specific type of...

Design Example: Capacitance Multiplier Circuit

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Fabrication of Indole-3-propionic acid loaded hydrogels for spinal cord injury repair.

Biomaterials advances·2026

Same author

Cefdinir reprograms Gram-positive bacteria to synergize with lysozyme against superbugs.

mLife·2026

Same author

Erratum for Theriault et al., "Utilization of a CRISPRi-based <i>ex vivo</i> challenge model to reveal temporally dependent gene essentiality in intracellular <i>Mycobacterium tuberculosis</i>".

mBio·2026

Same author

State-resolved vibrational dynamics of Ar-Kr.

The Journal of chemical physics·2026

Same author

In situ nanozyme assembly amplification enables sub-femtomolar-level colorimetric immunoassay.

Mikrochimica acta·2026

Same author

Lag effects of industrial pollution source turnover on soil potentially toxic elements at a regional scale.

Environmental science. Processes & impacts·2026

Search research articles

Related Experiment Video

Updated: Feb 28, 2026

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

A Low-Noise MEMS Accelerometer Based on a Symmetrical Sandwich Capacitor Structure.

Zihan Wang^1,2, Chaowei Si³, Jihua Zhang^1,2

¹School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.

|February 27, 2026

Summary

This study introduces a novel Micro-Electro-Mechanical Systems (MEMS) accelerometer with a symmetrical design. The high-performance device achieves excellent sensitivity and low noise for advanced inertial sensing.

Keywords:

MEMS accelerometer anodic bonding low noise

More Related Videos

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Published on: February 4, 2018

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

Related Experiment Videos

Last Updated: Feb 28, 2026

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Published on: February 4, 2018

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

Area of Science:

Micro-Electro-Mechanical Systems (MEMS)
Inertial Sensing Technology
Capacitive Sensors

Background:

MEMS accelerometers are crucial for inertial sensing.
Achieving high performance requires overcoming challenges like parasitic capacitance and cross-axis coupling.
Existing designs often face limitations in sensitivity, linearity, or noise.

Purpose of the Study:

To develop a high-performance MEMS accelerometer with enhanced structural symmetry and reduced parasitic capacitance.
To improve sensitivity, linearity, and noise performance for precision inertial sensing.
To demonstrate a viable fabrication process for competitive MEMS accelerometers.

Main Methods:

Employed a symmetrical differential 'sandwich' capacitive structure.
Integrated orthogonal rectangular compensation with wet anisotropic etching for symmetry.
Utilized a glass-silicon composite cover plate and anodic bonding to minimize parasitic capacitance.
Conducted simulations to verify mode separation and low cross-axis coupling.

Main Results:

Achieved high sensitivity of 0.2216 V/g and excellent linearity of 99.842% within a 0-8 g range.
Demonstrated outstanding noise performance at 7.88 µg/√Hz and bias instability of 6.39 µg.
Simulations confirmed sufficient separation between resonant frequencies and orthogonal/torsional modes.

Conclusions:

The proposed MEMS accelerometer design offers competitive performance against commercial devices.
The innovative fabrication process provides a viable technical route for high-precision inertial sensing.
This work contributes to the advancement of MEMS-based inertial measurement units.