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Doping Engineering of Single-Walled Carbon Nanotubes by Nitrogen Compounds Using Basicity and Alignment
Bogumiła Kumanek1, Karolina Z Milowska2,3,4, Łukasz Przypis1
1Department of Organic Chemistry, Bioorganic Chemistry and Biotechnology, Silesian University of Technology, B. Krzywoustego 4, 44-100 Gliwice, Poland.
ACS Applied Materials & Interfaces
|May 18, 2022
Summary
Doping single-walled carbon nanotubes (SWCNTs) with nitrogen compounds modifies electrical conductivity. Dopant properties like Hammett
Area of Science:
- Materials Science
- Nanotechnology
- Physical Chemistry
Background:
- Single-walled carbon nanotubes (SWCNTs) possess tunable electrical and thermoelectric properties via doping.
- Understanding dopant effects is crucial for optimizing SWCNT-based electronic devices.
Purpose of the Study:
- To investigate the impact of over 40 nitrogen-bearing compounds as dopants on SWCNT electrical conductivity.
- To establish structure-property relationships between dopant characteristics and their effect on SWCNTs.
Main Methods:
- Systematic doping of SWCNTs using a diverse library of nitrogen-containing compounds.
- Electrical conductivity measurements of doped SWCNTs.
- Correlation analysis using Hammett's constants and pKa values.
- First-principles calculations to support empirical observations.
Main Results:
- The electrical conductivity of SWCNTs is significantly influenced by the type and concentration of nitrogen dopants.
- Dopant impact correlates with electronic properties, predictable via Hammett's constants and pKa values.
- Doping levels can be controlled by dopant choice, concentration, and molecular orientation around SWCNTs.
Conclusions:
- Nitrogen-bearing compounds offer versatile doping strategies for tuning SWCNT properties.
- Predictive models based on dopant chemistry (Hammett's constants, pKa) can guide material design.
- Molecular orientation presents an additional controllable parameter for optimizing SWCNT doping.
