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First passage in the presence of stochastic resetting and a potential barrier
Saeed Ahmad1, Krishna Rijal1, Dibyendu Das1
1Physics Department, Indian Institute of Technology Bombay, Mumbai 400076, India.
Abstract:
Diffusion and first passage in the presence of stochastic resetting and potential bias have been of recent interest. We study a few models, systematically progressing in their complexity, to understand the usefulness of resetting. In the parameter space of the models, there are multiple continuous and discontinuous transitions where the advantage of resetting vanishes. We show these results analytically exactly for a tent potential, and numerically accurately for a quartic potential relevant to a magnetic system at low temperatures. We find that the spatial asymmetry of the potential across the barrier, and the number of absorbing boundaries, play a crucial role in determining the type of transition.
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