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Updated: Sep 22, 2025
Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation
Zhaole Su1,2, Yangfeng Li1,2, Xiaotao Hu1,2
1Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Abstract:
High-temperature nitridation is commonly thought of as a necessary process to obtain N-polar GaN films on a sapphire substrate. In this work, high-quality N-polar GaN films were grown on a vicinal sapphire substrate with a 100 nm high-temperature (HT) AlN buffer layer (high V/III ratio) and without an intentional nitriding process. The smallest X-ray full width at half maximum (FWHM) values of the (002)/(102) plane were 237/337 arcsec. On the contrary, N-polar GaN film with an intentional nitriding process had a lower crystal quality. In addition, we investigated the effect of different substrate treatments 1 min before the high-temperature AlN layer's growth on the quality of the N-polar GaN films grown on different vicinal sapphire substrates.
