Three-Terminal Multifunctional n-MoS₂/p-GaN Heterojunctions

This study demonstrates an innovative three-terminal reconfigurable multifunctional optoelectronic device based on a monolayer n-molybdenum disulfide (n-MoS₂)/p-gallium nitride (p-GaN) heterojunction with a van der Waals (vdW) gap. The proposed third terminal provides flexible control over the output characteristics, enabling the monolithic integration of multiple functionalities within a single architecture. The device works as a self-powered ultraviolet (UV) photodetector under two-terminal bias and exhibits broad spectral response covering both visible and UV lights. It facilitates the recognition accuracy of blurred information in an artificial neural network. Additionally, the output photocurrent can be modulated through the applied third-terminal voltage and incident light, enabling the implementation of tunable photodetectors, optoelectronic NAND, NOR logic gates, and reconfigurable ternary and quaternary multivalued logic gates within a single device. This work provides a feasible strategy for designing reconfigurable optoelectronic devices that combine the advantages of GaN and MoS₂, showing the potential use in artificial vision systems, lower power integrated circuits, and opto-electric interconnection.