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Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Characteristics of JFET01:21

Characteristics of JFET

Junction Field Effect Transistors (JFETs) exhibit specific operational characteristics based on the relationship between the drain current (id) and the drain-source voltage (Vds), along with varying gate-source voltages (Vgs).
The core of a JFET's operation is controlling drain current by modulating the gate-source voltage. When the drain and gate voltage are set to zero, the JFET exhibits no net current flow, representing a state of equilibrium. The drain current increases linearly as the...

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Updated: May 31, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Unlocking the performance limits of 2T0C DRAM with Ω-shaped-gated single-crystal In2O3 FETs.

Shiyue Zuo1,2, Zhengdao Xie1, Xu Zhao2

  • 1State Key Laboratory of Chemo and Biosensing, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China.

Science Advances
|May 29, 2026
PubMed
Summary

High-performance single-crystal Indium Oxide field-effect transistors (SC In2O3 FETs) with an Ω-shaped gate structure achieve excellent mobility and stability. These transistors enable advanced capacitorless dynamic random-access memory (DRAM) cells with superior performance.

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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

Related Experiment Videos

Last Updated: May 31, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

Area of Science:

  • Materials Science
  • Electronics Engineering
  • Semiconductor Physics

Background:

  • Oxide electronics offer potential for advanced applications but face performance limitations.
  • Indium oxide (In2O3) is a promising semiconductor material for next-generation electronic devices.
  • Field-effect transistors (FETs) are fundamental components in modern electronics.

Purpose of the Study:

  • To develop high-performance Ω-shaped-gated single-crystal In2O3 FETs (Ω-SC In2O3 FETs).
  • To demonstrate the application of these FETs in a capacitorless two-transistor (2T0C) dynamic random-access memory (DRAM) cell.
  • To evaluate the electrical characteristics and stability of the fabricated devices and memory cells.

Main Methods:

  • Fabrication of Ω-shaped-gated single-crystal In2O3 FETs.
  • Characterization of device performance including field-effect mobility, on-off ratio, and subthreshold swing.
  • Assessment of gate bias temperature stress stability.
  • Construction and testing of a capacitorless 2T0C DRAM cell using the fabricated FETs.

Main Results:

  • Achieved high average field-effect mobility of 321.7 cm²/V·s and an on-off ratio >10⁹.
  • Obtained a steep subthreshold swing (SS) of 64.6 mV/dec, indicating excellent electrostatic control.
  • Demonstrated robust gate bias temperature stress stability with minimal threshold voltage shift.
  • Fabricated capacitorless 2T0C DRAM cells exhibited long data retention (10⁵ s), ultrafast access speed (5 ns), high endurance (10¹² cycles), and 3-bit storage.

Conclusions:

  • The Ω-shaped gate structure significantly enhances the electrostatic control and performance of SC In2O3 FETs.
  • These high-performance FETs are suitable for demanding applications like capacitorless DRAM.
  • The developed 2T0C DRAM cell shows promising characteristics for future memory technologies.