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Topologically tuned terahertz confinement in a nonlinear photonic chip
Jiayi Wang1, Shiqi Xia1, Ride Wang2
1The MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Institute of Applied Physics and School of Physics, Nankai University, Tianjin, 300457, China.
Light, Science & Applications
|May 23, 2022
Summary
This study demonstrates topological control of terahertz (THz) waves using a lithium niobate chip, enabling efficient THz generation and confinement for integrated circuits.
Area of Science:
- Photonics and Metamaterials
- Condensed Matter Physics
- Electromagnetism
Background:
- Compact terahertz (THz) devices are crucial for high-speed communication and sensing.
- Challenges in THz technology include controlled generation, transport, and detection, particularly for chip-scale applications, due to coupling inefficiencies and absorption losses.
Purpose of the Study:
- To demonstrate nonlinear generation and topologically tuned confinement of THz waves.
- To explore the use of engineered lithium niobate chips with Su-Schrieffer-Heeger lattices for THz wave manipulation.
- To investigate the robustness of topological confinement against perturbations.
Main Methods:
- Utilized nonlinear generation of THz waves.
- Engineered a lithium niobate chip forming a wedge-shaped Su-Schrieffer-Heeger lattice.
- Experimentally measured band structures to visualize THz localization in momentum space.
- Analyzed the robustness of confined modes against chiral perturbations in trivial and nontrivial topological regimes.
Main Results:
- Successfully demonstrated topologically controlled confinement of THz waves.
- Provided direct visualization of THz localization in momentum space via measured band structures.
- Showcased the robustness of the confined THz mode against chiral perturbations.
Conclusions:
- Topological control of THz waves offers new possibilities for THz integrated circuits.
- This approach promises advancements in terahertz photonic applications.
- The engineered lithium niobate chip provides a platform for novel THz devices.

