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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
FeP2 monolayer: isoelectronic analogue of MoS2 with excellent electronic and optical properties
1Department of Chemistry, Key Laboratory of Functional Inorganic Materials of Anhui Province, Anhui University, Hefei, Anhui 230601, P. R. China. clj@ustc.edu.
Abstract:
Two-dimensional semiconductors with suitable indirect band gaps, excellent light absorption capacity, and oxidation resistance are particularly suitable for material applications. Here based on first-principle calculations, we report that the FeP2 monolayer, which is isoelectronic with MoS2, has novel electronic properties and an ultra-low diffusion energy barrier of K on the surface, indicating its potential as an anode material of K-ion batteries. The calculated phonon dispersion curves, molecular dynamics, and elastic constants showed that it has high structural stability and oxidation resistance. The monolayer was a semiconductor with an indirect band gap of 0.68 eV. In addition, the FeP2 monolayer had obvious light absorption in the infrared, visible, and ultraviolet regions, which can be widely used in optoelectronic devices. Bonding analysis showed that there were multicenter bonds inside every hexagonal ring. As the anode material of K-ion batteries, the FeP2 monolayer had a capacity of 456.84 mA h g-1, low diffusion energy barrier, and open-circuit voltage. All these characteristics suggest that the FeP2 monolayer is a potential anode material for K-ion batteries, which needs to be further verified by experiments.
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