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Electrostatically Controllable Channel Thickness and Tunable Low-Frequency Noise Characteristics of Double-Gated

Jimin Park1, Junho Nam1, Jangyup Son1,2

  • 1Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Joellabuk-do 55324, South Korea.

ACS Applied Materials & Interfaces
|May 26, 2022
PubMed

Keywords:
Ion/Ioff ratiocoupling effectsdouble gateelectrostatically controllable channel-thicknesslow-frequency (LF) noisemultilayer MoS2 transistorsseries resistance and carrier mobility

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