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Updated: Sep 21, 2025

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
Published on: August 15, 2014
THz MEMS Switch Design
Yukang Feng1, Han-Yu Tsao1, N Scott Barker1
1Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USA.
Abstract:
In this work, an mm-wave/THz MEMS switch design process is presented. The challenges and solutions associated with the switch electrical design, modeling, fabrication, and test are explored and discussed. To investigate the feasibility of this design process, the switches are designed on both silicon and fused quartz substrate and then tested in the 140-750 GHz frequency range. The measurement fits design expectations and simulation well. At 750 GHz the measurement results from switches on both substrates have an ON state insertion loss of less than 3 dB and an OFF state isolation larger than 12 dB.
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