Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes

Area of Science:

• Materials Science
• Electrical Engineering
• Semiconductor Physics

Background:

• Schottky barrier diodes (SBDs) fabricated using low-temperature processes (LTP-SBD) are crucial for flexible electronics.
• Standard extraction methods yield unreliable diode parameters for LTP-SBDs.

Purpose of the Study:

• Analyze the I-V characteristics of solution-processed ZnO LTP-SBDs.
• Investigate the limitations of conventional parameter extraction techniques.
• Propose a framework for understanding LTP-SBD performance.

Main Methods:

• Experimental fabrication of ZnO LTP-SBDs.
• I-V characteristic measurements.
• Simulations incorporating density of states (DOS) in the semiconductor gap.
• Comparison of experimental and simulated data.

Main Results:

• Standard extraction methods show significant ideality factor dispersion (2.2–4.1) and area dependence.
• LTP-SBDs exhibit increased series resistance (Rs) with bias dependence, reduced current, and low rectification ratios (RR).
• Incorporating DOS in simulations accurately reflects experimental observations.

Conclusions:

• Conventional parameter extraction methods are inadequate for LTP-SBDs.
• The presence of DOS in the semiconductor gap is essential for understanding LTP-SBD performance.
• Development of novel parameter extraction methodologies is required for accurate LTP-SBD characterization.