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Updated: Sep 21, 2025
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on
Hsiang-Chun Wang1,2,3, Chia-Hao Liu3, Chong-Rong Huang3
1College of Materials Science and Engineering, Shenzhen University-Hanshan Normal University Postdoctoral Workstation, Shenzhen University, Shenzhen 518060, China.
Abstract:
A p-GaN HEMT with an AlGaN cap layer was grown on a low resistance SiC substrate. The AlGaN cap layer had a wide band gap which can effectively suppress hole injection and improve gate reliability. In addition, we selected a 0° angle and low resistance SiC substrate which not only substantially reduced the number of lattice dislocation defects caused by the heterogeneous junction but also greatly reduced the overall cost. The device exhibited a favorable gate voltage swing of 18.5 V (@IGS = 1 mA/mm) and an off-state breakdown voltage of 763 V. The device dynamic characteristics and hole injection behavior were analyzed using a pulse measurement system, and Ron was found to increase and VTH to shift under the gate lag effect.
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