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Silicon-Controlled Rectifier Embedded Diode for 7 nm FinFET Process Electrostatic Discharge Protection
Xinyu Zhu1, Shurong Dong1, Fangjun Yu1
1Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 310027, China.
Nanomaterials (Basel, Switzerland)
|May 28, 2022
Summary
A novel silicon-controlled rectifier embedded diode (SCR-D) offers enhanced electrostatic discharge (ESD) protection for 7 nm FinFET circuits. This new device demonstrates superior current surge capability, meeting critical ESD design requirements.
Area of Science:
- Electrical Engineering
- Semiconductor Device Physics
Background:
- Advanced semiconductor manufacturing processes like 7 nm bulk FinFET require robust electrostatic discharge (ESD) protection.
- Existing ESD protection devices face challenges in balancing performance and size for scaled technologies.
Purpose of the Study:
- To propose and evaluate a new silicon-controlled rectifier embedded diode (SCR-D) for enhanced ESD protection in 7 nm FinFET processes.
- To demonstrate the improved current surge capability and compliance with ESD design windows.
Main Methods:
- Device fabrication using a 7 nm bulk FinFET process.
- Characterization using Transmission Line Pulse (TLP) testing.
- Comparative analysis against conventional SCR and diode string structures.
Main Results:
- The proposed SCR-D exhibits a low turn-on voltage of 1.77 V.
- It offers a 1.8-to-2.2-times higher current surge capability compared to conventional devices of similar size due to an additional conduction path.
- The device meets the stringent ESD design window requirements for 7 nm FinFET technology.
Conclusions:
- The novel SCR-D provides a significant advancement in ESD protection for advanced FinFET nodes.
- Its enhanced current handling capacity and low turn-on voltage make it suitable for practical integration into integrated circuits.
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