Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices
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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
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1New Jersey Institute of Technology, Department of Electrical & Computer Engineering, Newark, NJ, 07102, USA. hieu.p.nguyen@njit.edu.
Light, Science & Applications
|May 31, 2022
Abstract:
Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.
