Related Experiment Video
Updated: Sep 21, 2025

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
Published on: July 26, 2016
Mixed Anion Semiconductor In8S2.82Te6.18(Te2)3
Rebecca McClain1, Craig C Laing1, Jiahong Shen2
1Department of Chemistry, Northwestern University, Evanston, Chicago, Illinois 60208, United States.
Abstract:
The new heteroanionic compound In8S2.82Te6.18(Te2)3 crystallizes in the monoclinic space group C2/c with lattice parameters a = 14.2940(6) Å, b = 14.3092(4) Å, c = 14.1552(6) Å, and β = 90.845(3)°. The three-dimensional (3D) framework of In8S2.82Te6.18(Te2)3 is composed of a complex 3D network of corner-connected InQ4 tetrahedra with three Te22- dumbbell dimers per formula unit. The optical bandgap is 1.12(2) eV and the work function is 5.15(5) eV. First-principles electronic structure calculations using density functional theory (DFT) indicate that this material has potential as a p-type thermoelectric material as it is a narrow bandgap semiconductor, incorporates several heavy elements, and has multiple overlapping bands near the valence band maximum.
More Related Videos
04:09Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics
Published on: August 30, 2024
10:41Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
Published on: May 31, 2018
Related Concept Videos
Types of Semiconductors
Ionic Bonding and Electron Transfer
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Ionic Crystal Structures
Most monatomic ions behave as charged spheres, and their attraction for ions of opposite charge is the same in every direction. Consequently, stable structures for ionic compounds result (1) when ions of one charge are surrounded by as many ions as possible of the opposite...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...