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Lattice Centering and Coordination Number02:33

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The structure of a crystalline solid, whether a metal or not, is best described by considering its simplest repeating unit, which is referred to as its unit cell. The unit cell consists of lattice points that represent the locations of atoms or ions. The entire structure then consists of this unit cell repeating in three dimensions. The three different types of unit cells present in the cubic lattice are illustrated in Figure 1.
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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
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Towards n-type conductivity in hexagonal boron nitride.

Shiqiang Lu1, Peng Shen1, Hongye Zhang1

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|June 6, 2022
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Summary
This summary is machine-generated.

Researchers achieved n-type conductivity in 2D hexagonal boron nitride (h-BN) using orbital split induced level engineering. This breakthrough overcomes a major limitation for 2D materials in optoelectronics.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Semiconductor Physics

Background:

  • Asymmetric transport in n- and p-type conductivity is a fundamental challenge in wide bandgap semiconductors.
  • Hexagonal boron nitride (h-BN) exhibits p-type conduction, but achieving n-type conductivity remains elusive.

Purpose of the Study:

  • To demonstrate orbital split induced level engineering via sacrificial impurity coupling for efficient n-type transport in 2D h-BN.
  • To overcome the limitations of n-type conductivity in h-BN for advanced 2D optoelectronic devices.

Main Methods:

  • Utilizing the strong coupling between Oxygen (O) 2pz and Germanium (Ge) 4pz orbitals for level engineering.
  • Employing low-pressure chemical vapor deposition for in-situ Ge-O doping in h-BN monolayers.
  • Fabricating a vertically-stacked n-hBN/p-GaN heterojunction to demonstrate device performance.

Main Results:

  • A Ge-O2 trimer was found to create an extremely shallow donor level with very low ionization energy.
  • Efficient through-plane (~100 nA) and in-plane (~20 nA) n-type conduction was successfully achieved in doped h-BN.
  • The fabricated n-hBN/p-GaN heterojunction exhibited distinct rectification characteristics.

Conclusions:

  • Sacrificial impurity coupling provides a viable route to achieve n-type conductivity in h-BN.
  • This method overcomes the n-type limitation of h-BN, paving the way for future 2D optoelectronic devices.
  • The demonstrated technique offers a new strategy for doping and functionalizing 2D materials.