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Nonvolatile Electrical Valley Manipulation in WS2 by Ferroelectric Gating.

Xu Li1, Chengbiao Yang1, Yuanzheng Xia1

  • 1Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Institute, Xiamen University, Xiamen361005, P.R. China.

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|November 22, 2022
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Summary
This summary is machine-generated.

Ferroelectric gating nonvolatily tunes valley excitons in tungsten disulfide (WS2) by enhancing electron-phonon interactions. This breakthrough boosts room-temperature valley polarization for advanced valleytronics devices.

Keywords:
excitonsferroelectricityphotoluminescencetungsten disulfidevalley polarization

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Valleytronics utilizes electron valley properties for information processing.
  • Transition metal dichalcogenides like WS2 are promising for valleytronics.
  • Electrical control of valley properties is crucial for device applications.

Purpose of the Study:

  • To achieve nonvolatile electrical tuning of valley-excitonic properties in WS2 using ferroelectric gating.
  • To differentiate the effects of carrier doping versus ferroelectric coupling on valley polarization.
  • To investigate the potential for room-temperature valleytronics applications.

Main Methods:

  • Fabrication of monolayer and bilayer WS2 devices.
  • Application of ferroelectric gating with varying electrode configurations.
  • Measurement of valley polarization and exciton energy shifts.
  • Analysis of temperature-dependent valley polarization.

Main Results:

  • Ferroelectric gating strongly enhances room-temperature valley polarization in WS2.
  • Carrier doping provides moderate alteration, while ferroelectric coupling induces Stark shifts and enhances polarization.
  • Nonvolatile control of valley properties is demonstrated, persisting after gate voltage removal.
  • Bilayer WS2 exhibits enhanced valley polarization due to intralayer-interlayer exciton transitions.

Conclusions:

  • Ferroelectric gating offers effective electrical control over valley excitons in semiconductors.
  • The interaction with ferroelectric materials significantly boosts valley polarization in WS2.
  • This work paves the way for developing high-performance room-temperature valleytronics devices.