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Related Experiment Video

Updated: Sep 20, 2025

A Method for Growing Bio-memristors from Slime Mold

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Published on: November 2, 2017

Tunable Switching Behavior of GO-Based Memristors Using Thermal Reduction.

Muayad Abujabal¹, Heba Abunahla², Baker Mohammad²

¹System on Chip Lab, Department of Mechanical Engineering, Khalifa University, Abu Dhabi P.O. Box 127788, United Arab Emirates.

Nanomaterials (Basel, Switzerland)

|June 10, 2022

Summary

This study introduces a new reduced graphene oxide memristor with tunable switching behavior controlled by thermal reduction time. This method offers precise control over resistance states for advanced electronic applications.

Keywords:

analog graphene oxide memristor oxidation reduction switching thermal

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Area of Science:

Materials Science
Nanotechnology
Electronics Engineering

Background:

Memristors are crucial for next-generation electronics, but controlling their properties remains a challenge.
Graphene oxide (GO) offers a promising material for memristor fabrication due to its tunable electronic properties.

Purpose of the Study:

To fabricate a novel planar reduced graphene oxide (rGO) memristor (MR) device.
To demonstrate tunable resistive switching behavior controlled by GO reduction time.
To explore low-temperature thermal reduction as a method for fine-tuning memristor properties.

Main Methods:

Fabrication of planar rGO memristors using standard microfabrication on a flexible cyclic olefin copolymer (COC) substrate.
Controlled thermal reduction of GO at 100 °C for varying durations.
Electrical characterization, wettability tests, and X-ray diffraction (XRD) analysis.

Main Results:

Achieved tunable resistive switching behavior in rGO memristors by adjusting GO thermal reduction time.
Demonstrated analog switching characteristics with multiple resistance states.
Observed a reversal in switching behavior (HRS to LRS or LRS to HRS) based on reduction time (<20h vs. >20h).

Conclusions:

Low-temperature thermal reduction provides a controllable and non-toxic method for fabricating rGO memristors.
Precisely tunable switching properties broaden the application scope of rGO-based memristors.
This work presents a new pathway for developing advanced memristive devices with tailored functionalities.