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Updated: Sep 8, 2025

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
Published on: July 5, 2019
Spin-Valley Depolarization in van der Waals Heterostructures
Shu-Wen Zheng1, Dan Wang2, Hai-Yu Wang1
1State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.
Abstract:
The appearance of van der Waals heterostructures offers a new solution to valleytronics. Here, we observe the spin-valley depolarization process of electrons and holes in type-II MoS2-WSe2 heterostructures simultaneously for the first time by valley-resolved broad-band femtosecond pump-probe experiments. The different depolarization paths between electrons and holes make them have different spin-valley polarization lifetimes. The spin-valley depolarization pathway of holes is mainly dominated by a phonon-assisted intervalley scattering process, while intra- and intervalley coupling can trigger additional depolarization pathways for electrons. The hole polarization lifetime can be further prolonged to more than three times in trilayer heterostructure 2MoS2-WSe2. For MoS2-WS2 that has strong orbital hybridization of Mo and W atoms, both electrons and holes lose the spin-valley polarization extremely soon after charge separation, behaving similarly to intraexcitons in a monolayer. Our work advances the basic understanding of spin-valley depolarization of van der Waals heterostructures and facilitates the effort toward longer lifetime valleytronic devices for information transfer and storage applications.
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