Related Experiment Video
Updated: Sep 7, 2025

A Method for Growing Bio-memristors from Slime Mold
Published on: November 2, 2017
Concealable physically unclonable function chip with a memristor array
Bin Gao1, Bohan Lin1, Yachuan Pang1
1School of Integrated Circuits, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing 100084, China.
Abstract:
A physically unclonable function (PUF) is a creditable and lightweight solution to the mistrust in billions of Internet of Things devices. Because of this remarkable importance, PUF need to be immune to multifarious attack means. Making the PUF concealable is considered an effective countermeasure but it is not feasible for existing PUF designs. The bottleneck is finding a reproducible randomness source that supports repeatable concealment and accurate recovery of the PUF data. In this work, we experimentally demonstrate a concealable PUF at the chip level with an integrated memristor array and peripherals. The correlated filamentary switching characteristic of the hafnium oxide (HfO)-based memristor is used to achieve PUF concealment/recovery with SET/RESET operations efficiently. PUF recovery with a zero-bit error rate and remarkable attack resistance are achieved simultaneously with negligible circuit overhead. This concealable PUF provides a promising opportunity to build memristive hardware systems with effective security in the near future.
More Related Videos
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Clamper Circuit
Within this circuit, the diode's orientation prompts the capacitor to charge up to the level of the most negative peak of the input signal. Upon reaching this state, the diode ceases to...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...

