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Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor

Tangyou Sun1, Hui Shi1, Shuai Gao1

  • 1Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China.

Nanomaterials (Basel, Switzerland)
|June 24, 2022
PubMed

Keywords:
ZnO/PVA:MoS2data retentionendurancememory windowresistive switching

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