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Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade

Mircea Dragoman1, Adrian Dinescu1, Andrei Avram1

  • 1National Institute for Research and Development in Microtechnologies, 126A Erou Iancu Nicolae Street, 077190 Voluntari (Ilfov), Romania.

Nanotechnology
|June 29, 2022
PubMed

Keywords:
2D materials ferroelectricityRF magnetron sputteringferroelectricsmicrowavessemiconductorsthin filmstin sulfide

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