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MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

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Related Experiment Video

Updated: Sep 6, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

Layer-by-layer epitaxy of multi-layer MoS₂ wafers.

Qinqin Wang¹, Jian Tang¹, Xiaomei Li¹

¹Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

National Science Review

|June 30, 2022

Summary

High-quality multi-layer molybdenum disulfide (MoS₂) wafers were grown using layer-by-layer epitaxy. These advanced 2D semiconductor materials show improved electronic properties for next-generation electronics.

Keywords:

2D semiconductor high performance transistors layer-by-layer epitaxy multilayer MoS2 wafer thin film transistors

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Last Updated: Sep 6, 2025

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Published on: November 28, 2017

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Molybdenum disulfide (MoS₂) is a 2D semiconductor with significant potential for advanced electronics, surpassing silicon.
While monolayer MoS₂ is available, achieving high-quality multilayer MoS₂ wafers with enhanced properties remains a challenge.
Multilayers offer narrower band gaps, improved carrier mobilities, and higher current capacities compared to monolayers.

Purpose of the Study:

To develop a method for growing high-quality multi-layer MoS₂ 4-inch wafers.
To investigate the impact of layer number on the atomic structure and electronic properties of MoS₂.
To demonstrate the potential of these multi-layer MoS₂ wafers for advanced electronic devices.

Main Methods:

Layer-by-layer epitaxy process for controlled growth of multi-layer MoS₂.
Fabrication and characterization of field-effect transistors (FETs) using MoS₂ wafers with varying layer numbers.
Systematic evaluation of atomic structures and electronic properties, including field-effect mobility and on/off ratios.

Main Results:

Successful growth of high-quality multi-layer MoS₂ 4-inch wafers with controlled layer numbers up to six.
Demonstrated well-defined stacking orders and layer number control via epitaxy.
Significant improvements in device performance with increasing layer thickness, including enhanced field-effect mobility and on-current densities.
Achieved a record high room-temperature field-effect mobility of 234.7 cm²·V^-1·s^-1 and on-current density of 1.70 mA·μm^-1 in trilayer MoS₂ FETs.
Maintained a high on/off ratio of >10⁷ in the fabricated devices.

Conclusions:

The layer-by-layer epitaxy process enables the production of high-quality multi-layer MoS₂ wafers.
Thicker-layer MoS₂ field-effect transistors exhibit superior electronic performance compared to monolayers.
This advancement brings practical applications of 2D MoS₂ in electronics closer to reality.