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Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO2 for Sub-60-mV/Decade Subthreshold Slope
Siao-Cheng Yan1, Chen-Han Wu1, Chong-Jhe Sun1
1Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.
Abstract:
Ferroelectric fin field-effect transistors with a trench structure (trench Fe-FinFETs) were fabricated and characterized. The inclusion of the trench structures improved the electrical characteristics of the Fe-FinFETs. Moreover, short channel effects were suppressed by completely surrounding the trench channel with the gate electrodes. Compared with a conventional Fe-FinFET, the fabricated trench Fe-FinFET had a higher on-off current ratio of 4.1 × 107 and a steep minimum subthreshold swing of 35.4 mV/dec in the forward sweep. In addition, the fabricated trench Fe-FinFET had a very low drain-induced barrier lowering value of 4.47 mV/V and immunity to gate-induced drain leakage. Finally, a technology computer-aided design simulation was conducted to verify the experimental results.
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