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Updated: Sep 4, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Optical observation of single spins in silicon
Daniel B Higginbottom1, Alexander T K Kurkjian1,2, Camille Chartrand1,2
1Department of Physics, Simon Fraser University, Burnaby, British Columbia, Canada.
Abstract:
The global quantum internet will require long-lived, telecommunications-band photon-matter interfaces manufactured at scale1. Preliminary quantum networks based on photon-matter interfaces that meet a subset of these demands are encouraging efforts to identify new high-performance alternatives2. Silicon is an ideal host for commercial-scale solid-state quantum technologies. It is already an advanced platform within the global integrated photonics and microelectronics industries, as well as host to record-setting long-lived spin qubits3. Despite the overwhelming potential of the silicon quantum platform, the optical detection of individually addressable photon-spin interfaces in silicon has remained elusive. In this work, we integrate individually addressable 'T centre' photon-spin qubits in silicon photonic structures and characterize their spin-dependent telecommunications-band optical transitions. These results unlock immediate opportunities to construct silicon-integrated, telecommunications-band quantum information networks.
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