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Updated: Aug 14, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
On-demand electrical control of spin qubits
Will Gilbert1,2, Tuomo Tanttu3,4, Wee Han Lim3,4
1School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia. w.gilbert@unsw.edu.au.
Abstract:
Once called a 'classically non-describable two-valuedness' by Pauli, the electron spin forms a qubit that is naturally robust to electric fluctuations. Paradoxically, a common control strategy is the integration of micromagnets to enhance the coupling between spins and electric fields, which, in turn, hampers noise immunity and adds architectural complexity. Here we exploit a switchable interaction between spins and orbital motion of electrons in silicon quantum dots, without a micromagnet. The weak effects of relativistic spin-orbit interaction in silicon are enhanced, leading to a speed up in Rabi frequency by a factor of up to 650 by controlling the energy quantization of electrons in the nanostructure. Fast electrical control is demonstrated in multiple devices and electronic configurations. Using the electrical drive, we achieve a coherence time T2,Hahn ≈ 50 μs, fast single-qubit gates with Tπ/2 = 3 ns and gate fidelities of 99.93%, probed by randomized benchmarking. High-performance all-electrical control improves the prospects for scalable silicon quantum computing.
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