Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

MOSFET: Depletion Mode

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

MOSFET

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...

Modes of Operations of BJT

Modes of Operations of BJT

A Bipolar Junction Transistor (BJT) is a versatile component in electronics, functioning in four distinct modes based on the biasing of its junctions: active, saturation, cut-off, and inverted modes.
Active Mode: The most common mode for amplification, the active mode features a forward-biased emitter-base junction and a reverse-biased base-collector junction. This setup enables electrons to be injected from the emitter to the base while blocking the majority carriers at the collector. The...

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Giant Photovoltaic Effect and Self-Powered Photodetection in Lateral MoS<sub>2</sub> Homojunctions via Strong Interface Coupling.

ACS nano·2026

Same author

Anisotropic PdSe<sub>2</sub>/GeAs Heterostructures with Switchable Photocurrent Polarity for Polarization Imaging and Programmable Logic Gates.

Small (Weinheim an der Bergstrasse, Germany)·2026

Same author

Multimode photodiode on germanium-on-silicon for TE<sub>0</sub>,TE<sub>1</sub>, and TE<sub>2</sub> modes.

Optics letters·2025

Same author

Regulation of Oomycete Autophagy, Lipid Droplet Accumulation and Pathogenesis by Three Rab GTPases.

Molecular plant pathology·2025

Same author

An oomycete effector targets host calmodulin to suppress plant immunity.

The Plant journal : for cell and molecular biology·2025

Same author

Two-dimensional anisotropic semiconductors: from structure and properties to device applications.

Nanoscale·2025

Search research articles

Related Experiment Video

Updated: Sep 4, 2025

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

Silicon mode-insensitive modulator for TE₀ mode and TE₁ mode.

Gangqiang Zhou, Shihuan Ran, Liangjun Lu

|July 15, 2022

Summary

This study presents a silicon mode-insensitive modulator for mode-division multiplexing (MDM) systems. It successfully modulates both TE0 and TE1 modes, paving the way for enhanced optical communication capacity.

More Related Videos

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Published on: February 4, 2018

Related Experiment Videos

Last Updated: Sep 4, 2025

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Published on: February 4, 2018

Area of Science:

Photonics and Optical Communications
Integrated Optics
Semiconductor Devices

Background:

Mode-division multiplexing (MDM) is crucial for increasing optical communication capacity and flexibility.
Existing modulators often struggle with efficient modulation across multiple spatial modes.

Purpose of the Study:

To demonstrate a novel silicon mode-insensitive modulator.
To enable modulation of both the fundamental (TE0) and first higher-order (TE1) modes simultaneously.

Main Methods:

Utilized a balanced Mach-Zehnder interferometer architecture.
Employed a horizontally offset PN junction within the waveguide for effective mode modulation.
Integrated an adiabatic directional coupler for mode-insensitive power splitting.
Incorporated a mode-insensitive thermal phase shifter to control the operating point.

Main Results:

Achieved successful on-off keying modulation at 32 Gb/s for both TE0 and TE1 modes.
Demonstrated effective modulation of both modes using the offset PN junction design.
Validated the mode-insensitivity of the power splitter and phase shifter components.

Conclusions:

The developed silicon modulator is a viable component for mode-division multiplexing systems.
This technology holds potential for applications in advanced optical sampling systems.
The mode-insensitive design offers a pathway to higher-capacity optical networks.