Polyurethane-Based Stretchable Semiconductor Nanofilms with High Intrinsic Recovery Similar to Conventional...

Area of Science:

• Materials Science
• Polymer Chemistry
• Organic Electronics

Background:

• Stretchable electronics require polymer semiconductors with high elastic recovery (ER) and mechanical stability in thin film form.
• Existing block copolymer semiconductors often compromise mechanical properties for electronic performance.

Purpose of the Study:

• To develop a novel polymer semiconductor with superior elastic recovery and high charge carrier mobility for advanced stretchable electronics.
• To investigate the structure-property relationships in a new class of stretchable semiconductor block copolymers.

Main Methods:

• Synthesized PU(DPP)35 via copolymerization of diketopyrrolopyrrole and hydrogenated polybutadiene blocks.
• Fabricated pseudo free-standing thin films and organic thin film transistors (OTFTs).
• Characterized mechanical properties (ER, crack onset strain - COS) and electronic properties (hole mobility).

Main Results:

• PU(DPP)35 achieved >80% ER at 175% strain and COS >300%, comparable to elastomers.
• Achieved a maximum hole mobility of 0.19 cm²/V·s in OTFTs.
• Blends with PDPPT3 showed enhanced mobility up to 1.28 cm²/V·s with good mechanical stability and cycling performance.

Conclusions:

• PU(DPP)35 represents a breakthrough in block copolymer-type stretchable semiconductors, offering excellent mechanical and electronic properties.
• The developed materials demonstrate significant potential for high-performance, durable stretchable electronic applications.