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Optimization of thermal field of 150 mm SiC crystal growth by PVT method
Shengtao Zhang1, Guofeng Fan2, Tie Li3
1Harbin Institute of Technology, School of Chemistry and Chemical Engineering Heilongjiang 150001 China 19b925037@stu.hit.edu.cn zhaolili@hit.edu.cn +86 84010483 +86 188 4613 0714.
Abstract:
The excellent physical properties of SiC as an electronic material determine its important application prospects, especially in the new-energy industry, but the preparation of large-sized materials with high quality is not easy. Therefore, the physical fields in the growth process were modeled and studied with the help of the numerical simulation software Virtual Reactor, and its accuracy was verified by the agreement between morphology of the experimental crystal and the simulation. Additionally, the effects of thermal insulation adjustment of crystal growth thermal fields, application of seed crystals with different diameters, and shelter structure on the crystal growth process were also studied. By optimizing the crystal growth conditions, a nearly flat and slightly convex crystal growth interface was obtained successfully in our lab. Crystal quality was significantly improved, and a 6-inch SiC crystal with single polytype, high quality and low defects was successfully prepared.
