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Updated: Sep 4, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Proposal for All-Electrical Spin Manipulation and Detection for a Single Molecule on Boron-Substituted Graphene
Fei Gao1, Dongzhe Li2, Cyrille Barreteau3
1Department of Physics, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark.
Abstract:
All-electrical writing and reading of spin states attract considerable attention for their promising applications in energy-efficient spintronics devices. Here we show, based on rigorous first-principles calculations, that the spin properties can be manipulated and detected in molecular spinterfaces, where an iron tetraphenyl porphyrin (FeTPP) molecule is deposited on boron-substituted graphene (BG). Notably, a reversible spin switching between the S=1 and S=3/2 states is achieved by a gate electrode. We can trace the origin to a strong hybridization between the Fe-d_{z^{2}} and B-p_{z} orbitals. Combining density functional theory with nonequilibrium Green's function formalism, we propose an experimentally feasible three-terminal setup to probe the spin state. Furthermore, we show how the in-plane quantum transport for the BG, which is non-spin polarized, can be modified by FeTPP, yielding a significant transport spin polarization near the Fermi energy (>10% for typical coverage). Our work paves the way to realize all-electrical spintronics devices using molecular spinterfaces.
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