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Published on: August 28, 2018
Two-Dimensional Perovskite-Gated AlGaN/GaN High-Electron-Mobility-Transistor for Neuromorphic Vision Sensor
Xitong Hong1, Yulong Huang2, Qianlei Tian1
1Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education& Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China.
This study introduces a novel ultrasensitive visual sensor using aluminum gallium nitride/gallium nitride (AlGaN/GaN) and perovskite materials. This breakthrough enables efficient optical information storage and advanced neuromorphic visual system applications.
Area of Science:
- Materials Science
- Optoelectronics
- Neuroscience
Background:
- Gallium nitride (GaN) offers excellent optoelectronic properties for neuromorphic visual systems (NVS).
- Existing GaN devices lack persistent and bidirectional photoresponse, hindering practical NVS development.
- Overcoming these limitations is crucial for advancing NVS technology.
Purpose of the Study:
- To develop an ultrasensitive visual sensor for NVS applications.
- To address the limitations of temporary and unidirectional photoresponse in current GaN devices.
- To demonstrate optoelectronic synaptic functions and achieve high-performance image recognition.
Main Methods:
- Fabrication of a phototransistor sensor using AlGaN/GaN high-electron-mobility-transistor (HEMT) and 2D Ruddlesden-Popper organic-inorganic halide perovskite (2D OIHP).
- Exploitation of ion transport activation energy variation in 2D OIHP for optical information perception and storage.
- Utilizing photo-enhanced field-effect in HEMT for gate-tunable photoresponse and synaptic function demonstration.
Main Results:
- The sensor exhibits ultrasensitive perception and storage of optical information across the ultraviolet-visible spectrum.
- Demonstration of gate-tunable negative and positive photoresponse, mimicking synaptic functions like inhibitory and excitatory postsynaptic currents.
- Achieved 100% color image recognition rate in a constructed NVS for neuromorphic visual preprocessing.
Conclusions:
- The novel AlGaN/GaN-2D OIHP sensor overcomes limitations of traditional GaN devices for NVS.
- The sensor effectively mimics synaptic functions, enabling advanced neuromorphic processing.
- This work paves the way for practical, high-performance neuromorphic visual systems.
