An AlGaN/GaN Lateral Bidirectional Current-Regulating Diode with Two Symmetrical Hybrid Ohmic-Schottky Structures

Area of Science:

• Semiconductor Device Physics
• Power Electronics
• Materials Science

Background:

• AC light emitting diode (LED) drivers require bidirectional current-regulating capabilities.
• Existing rectifier circuits often involve multiple components, increasing cost and power consumption.
• A need exists for efficient, integrated solutions for bidirectional current control.

Purpose of the Study:

• To propose and demonstrate a novel AlGaN/GaN lateral bidirectional current-regulating diode (B-CRD).
• To investigate the device's ability to provide steady bidirectional current with simplified circuitry.
• To analyze the impact of electrode design on device characteristics and performance.

Main Methods:

• Device fabrication and characterization using TCAD Sentaurus simulations.
• Design of a novel B-CRD with symmetrical hybrid-trench electrodes.
• Mixed-mode device/circuit simulations to evaluate dynamic response.

Main Results:

• The proposed B-CRD achieves unidirectional invariant current over a wide voltage range (0-200 V) by connecting Ohmic and trench Schottky contacts.
• Symmetrical hybrid-trench electrodes enable steady current delivery in both directions.
• TCAD simulations show critical characteristics like knee voltage and current density are tunable via trench geometry.
• Mixed-mode simulations confirm a response time in the nanosecond range.

Conclusions:

• The novel AlGaN/GaN B-CRD offers a promising solution for bidirectional current regulation in AC LED drivers.
• The device's integrated design reduces component count, cost, and power loss.
• Tunable characteristics and fast response make it suitable for specialized applications requiring bidirectional current limiting.