Related Experiment Video
Updated: Sep 3, 2025

10:33
Research and Development of High-performance Explosives
Published on: February 20, 2016
17.7K
Simulation and Test of a MEMS Arming Device for a Fuze
Yu Qin1, Yanbai Shen1, Xiannan Zou2
1School of Resources and Civil Engineering, Northeastern University, Shenyang 110819, China.
Micromachines
|July 27, 2022
Summary
A new Micro-Electro-Mechanical Systems (MEMS) arming device for a 40 mm grenade fuze enhances structural strength. This design ensures reliable safety release and arming safety for grenade applications.
Area of Science:
- Engineering
- Mechanical Engineering
- Defense Technology
Background:
- Addressing structural integrity challenges in Micro-Electro-Mechanical Systems (MEMS) arming devices for fuzes.
- The need for enhanced safety and reliability in grenade arming mechanisms.
Purpose of the Study:
- To design and validate a novel MEMS arming device for a specific 40 mm grenade.
- To improve the structural strength and ensure the functional reliability and safety of the arming device.
Main Methods:
- Introduction to the working principle of the designed arming device.
- Simulation of critical components including the shear pin, rotary pin, and locking mechanism.
- Development of specialized test tools for verification and rigorous testing of explosion reliability and arming safety.
Main Results:
- The designed MEMS arming device demonstrates improved structural strength.
- The device successfully meets the safety release action requirements for the 40 mm grenade.
- Performance validation confirms the device's suitability for explosion reliability and arming safety applications.
Conclusions:
- The novel MEMS arming device effectively solves structural strength issues.
- The design meets the stringent requirements for safety release, explosion reliability, and arming safety in 40 mm grenades.
- This advancement contributes to the safety and effectiveness of grenade fuzes.
More Related Videos
Related Concept Videos
Biasing of FET
362
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
362
MOS Capacitor
942
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
942
MOSFET
568
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
568
Small-Signal Analysis of MOSFET Amplifiers
727
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
727

