An insight into optical beam induced current microscopy: Concepts and applications

Area of Science:

• Materials Science
• Electrical Engineering
• Physics

Background:

• Characterizing electronic device quality is crucial for reliability and efficiency.
• Electron beam induced current (EBIC) microscopy is a common but complex method for defect analysis.
• Optical beam induced current (OBIC) microscopy provides a powerful, non-destructive alternative.

Purpose of the Study:

• To review the fundamental principles and applications of OBIC microscopy in semiconductor device characterization.
• To provide an overview of the evolution and recent advancements in OBIC microscopy techniques.
• To discuss the challenges and future directions for OBIC in analyzing complex electronic devices.

Main Methods:

• Utilizes laser scanning to generate electron-hole pairs in the sample.
• Detects the resultant current profile synchronized with beam positions.
• Employs continuous laser single photon, pulsed laser single photon, and multiphoton strategies.

Main Results:

• OBIC microscopy effectively localizes defect sites, such as those from metal-semiconductor interdiffusion or electrostatic discharge (ESD).
• OBIC signals reveal parameters directly impacting device reliability and efficiency.
• Recent advancements enable 3D mapping of photocurrent response with high spatiotemporal resolution.

Conclusions:

• OBIC microscopy is a valuable tool for spatially resolved mapping of local electronic properties.
• It offers significant advantages over traditional methods for defect analysis in electronic devices.
• Further development promises enhanced capabilities for characterizing complex semiconductor devices.