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Electrical and Structural Characterization of Few-Layer Graphene Sheets on Quartz
Kazybek Aimaganbetov1, Nurlan Almas2, Bayan Kurbanova3
1Institute of Physics and Technology, Satbayev University, Almaty 050032, Kazakhstan.
Materials (Basel, Switzerland)
|August 12, 2022
Summary
Transferring graphene using liquid-phase etching can unintentionally dope the material and create a small electronic gap. This impacts graphene
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Graphene exhibits exceptional properties but faces commercialization challenges.
- Preserving graphene's unique characteristics during substrate transfer is crucial.
Purpose of the Study:
- To investigate the effects of liquid-phase transfer on few-layer graphene properties.
- To analyze graphene transferred from copper to quartz using ammonium persulfate.
Main Methods:
- Scanning Electron Microscopy (SEM)
- Raman Spectroscopy
- Admittance Spectroscopy
- Four-point Probe Electrical Measurements
- Arrhenius Analysis
Main Results:
- Unintentional etching of the quartz substrate and formation of facet structures observed via SEM.
- P-type doping of few-layer graphene confirmed by Raman spectroscopy and electrical measurements.
- An electronic gap of 0.022 eV was identified, with thermally activated carrier transport dominating.
Conclusions:
- Liquid-phase transfer using ammonium persulfate etching affects graphene properties.
- The process introduces p-type doping and an electronic gap in few-layer graphene.
- Understanding these transfer-induced changes is vital for graphene applications.
