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Design of plasmonic enhanced all-optical phase-change memory for secondary storage applications
Xiaojuan Lian1,2, Cunhu Liu1, Jinke Fu1
1College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China.
Nanotechnology
|August 16, 2022
Summary
This study introduces a novel phase-change optical memory using plasmonic resonance for secondary storage. The device achieves ultra-fast speeds and low energy consumption, outperforming conventional storage and advancing all-optical computing.
Area of Science:
- Optoelectronics
- Nanotechnology
- Materials Science
Background:
- Phase-change optical devices offer high speed and bandwidth but are primarily used for on-chip applications.
- Optical secondary storage remains underdeveloped, limiting the potential of all-optical computing.
Purpose of the Study:
- To develop a novel optical secondary storage memory using phase-change materials and plasmonic resonance.
- To enhance energy efficiency and switching speed for optical memory applications.
Main Methods:
- Utilized a plasmonic dimer nanoantenna to induce plasmonic resonance within a chalcogenide alloy.
- Optimized nanoantenna dimensions (height, radius, separation) for improved performance.
Main Results:
- Achieved write/erase energies of 100 pJ and 240 pJ, respectively.
- Demonstrated write/erase speeds of 10 ns for crystallization and amorphization.
- The proposed device significantly outperforms conventional secondary storage memories.
Conclusions:
- The novel plasmonic phase-change optical memory is a promising solution for secondary storage.
- This advancement paves the way for the development of future all-optical computers.
