Two-Dimensional Crystals as a Buffer Layer for High Work Function Applications: The Case of Monolayer MoO3.
Dorota A Kowalczyk1, Maciej Rogala1, Karol Szałowski1
1Department of Solid State Physics (Member of National Photovoltaic Laboratory, Poland), Faculty of Physics and Applied Informatics, University of Lodz, Pomorska 149/153, 90-236 Łódź, Poland.
ACS Applied Materials & Interfaces
|August 17, 2022
Summary
Crystalline two-dimensional molybdenum trioxide (2D MoO3) significantly boosts work function (WF) up to 6.4 eV. This makes 2D MoO3 ideal for advanced organic electronics and anode materials.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Surface Science
Background:
- Work function (WF) modification is critical for advanced electronic devices.
- Two-dimensional (2D) materials offer unique properties for surface engineering.
- Achieving high and tunable WF is essential for organic electronics and energy storage.
Purpose of the Study:
- To investigate the impact of crystallinity on the work function of 2D MoO3.
- To explore the potential of 2D MoO3 for enhancing substrate work function.
- To understand the role of growth conditions and defects on the electronic properties of 2D MoO3.
Main Methods:
- Kelvin probe force microscopy (KPFM) for nanoscale WF mapping.
- Ultraviolet photoemission spectroscopy (UPS) for electronic structure analysis.
- Density functional theory (DFT) calculations for electronic potential and defect analysis.
Main Results:
- Crystalline 2D α-MoO3 monolayers enhance substrate WF to 6.4 eV at 0.7 nm thickness.
- UPS is effective for high WF determination on lower WF substrates with sufficient 2D island coverage.
- KPFM is the preferred method for nanoscale WF investigations, especially under ultrahigh vacuum.
- DFT calculations reveal WF anisotropy due to oxygen vacancies in MoO3.
Conclusions:
- Crystallinity of 2D materials is key for effective WF modification.
- 2D MoO3 is a promising material for high WF applications in organic electronics.
- Controlled growth environments are crucial for achieving desired WF properties in MoO3 films.


